Predicting the Electronic Properties of 3D, Million-Atom Semiconductor Nanostructure Architectures.
The past ~10 years have witnessed revolutionary breakthroughs both in synthesis of quantum dots (leading to nearly monodispersed, defect-free nanostructures) and in characterization of such systems, revealing ultra narrow spectroscopic lines of <1meV width, exposing new intriguing effects, such as multiple exciton generation, fine-structure splitting, quantum entanglement, multiexciton recombination and more. These discoveries have led to new technological applications including quantum computing and ultra-high efficiency solar cells. Our work in this project is based on two realizations/observations:
First, that the dots exhibiting clean and rich spectroscopic and transport characteristics are rather big. Indeed, the phenomenology indicated above is exhibited only by the well-passivated defect-free quantum dots containing at least a few thousand atoms (colloidal) and even a few hundred thousand atoms (self assembled). Understanding the behavior of nanotechnology devices requires the study of even larger, million-atom systems composed of multiple components such as wires+dots+films.
Second, first-principles many-body computational techniques based on current approaches (Quantum Monte-Carlo, GW, Bethe-Salpeter) are unlikely to be adaptable to such large structures and, at the same time, the effective mass-based techniques are too crude to provide insights on the many-body/atomistic phenomenology revealed by experiment. Thus, we have developed a set of methods that use an atomistic approach (unlike effective-mass based techniques) and utilize single-particle + many body techniques that are readily scalable to ~103-106 atom nanostructures.
